unisonic technologies co., ltd un1066 npn silicon transistor www.unisonic.com.tw 1 of 5 copyright ? 2008 unisonic technologies co., ltd qw-r209-023,c high speed switching transistor ? features * low v ce(sat) voltage, up to 3a * suitable for fast switching applications * high current gain lead-free: un1066l halogen-free: un1066g ? ordering information ordering number pin assignment normal lead free halogen free package 1 2 3 packing un1066-ab3-r un1066l-ab3-r UN1066G-AB3-R sot-89 b c e tape reel un1066-tn3-r un1066l-tn3-r un1066g-tn3-r to-252 b c e tape reel
un1066 npn silicon transistor unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r209-023,c ? absolute maximum rating (ta=25 ) parameter symbol ratings unit collector-to-base voltage bv cbo 20 v collector-to-emitter voltage bv ceo 15 v emitter-to-base voltage bv ebo 5 v collector current i c 6 a collector current (pulse) i cp 9 a base current i b 600 ma collector dissipation(t c =25 ) p c 3.5 w junction temperature t j 150 storage temperature t stg -55 ~ +150 note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (ta=25 ) parameter symbol test conditions min typ max unit collector-to-base breakdown voltage bv cbo i c =10 a, i e =0 20 v collector-to-emitter breakdown voltage bv ceo i c =1ma, r be = 15 v emitter-to-base breakdown voltage bv ebo i e =10 a, i c =0 6 v i c =1.5a, i b =30ma 180 mv collector-to-emitter sa turation voltage v ce(sat) i c =3a, i b =60ma 300 mv base-to-emitter saturation voltage v be(sat) i c =1.5a, i b =30ma 1.2 v collector cutoff current i cbo v cb =12v, i e =0 0.1 a emitter cutoff current i ebo v eb =4v, i c =0 0.1 a dc current gain h fe v ce =0.5v, i c =5a 250 gain-bandwidth product f t v ce =2v, i c =500ma 100 mhz output capacitance c ob v cb =10v, f=1mhz 50 pf turn-on time t on refer to test circuit 50 ns storage time t stg refer to test circuit 250 ns fall time t f refer to test circuit 25 ns
un1066 npn silicon transistor unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r209-023,c ? test circuit pw=20s d.c. 1% i b1 i b2 50 v r r b 100f 470f input output r l v be =-5v v cc =5v 20i b1 =-20i b2 =i c =1.5a
un1066 npn silicon transistor unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r209-023,c ? typical characteristics collector current, i c (a) dc current gain, h fe collector-to-emitter saturation voltage, v ce(sat) (mv) base-to-emitter saturation voltage, v be(sat) (v) 0.01 v ce(sat) vs. i c 5 collector current, i c (a) 0.1 1.0 10 2 4 6 2 4 6 1000 10 100 i c /i b =50 ta=25c
un1066 npn silicon transistor unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r209-023,c utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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